1.
On The Schottky Barrier Height Lowering Effect of Ti3SiC2 in Ohmic Contacts to P-Type 4H-SiC. Int.J. Fundam. Phys. Sci [Internet]. 2014 Sep. 30 [cited 2026 Oct. 16];4(3):95-100. Available from: https://www.fundamentaljournals.com/index.php/ijfps/article/view/73