Y.K. Sharma, Yi Xu, M. R. Jennings, C Fisher, P. Mawby, L.C. Feldman, and J.R. Williams, trans. 2014. “Improved Stability of 4H Sic-MOS Devices After Phosphorous Passivation With Etching Process”. International Journal of Fundamental Physical Sciences 4 (2): 37-42. https://doi.org/10.14331/ijfps.2014.330064.