C. A. FisherM. R. JenningsY. K. SharmaA. Sanchez-FuentesD. WalkerP. M. GammonA. Pérez-TomásS. M. ThomasS. E. BurrowsP. A. Mawby School of Engineering, University of Warwick, Coventry, CV4 7AL, UKDepartment of Physics, University of Warwick, Coventry, CV4 7AL, UKInstitut Català De Nanociència i Nanotecnologia, 08193, Bellaterra, Spain Craig.A.Fisher@warwick.ac.uk International Journal of Fundamental Physical Sciences (IJFPS) 4 3 95-100 September, 2014 2231-8186 https://doi.org/10.14331/ijfps.2014.330071 This paper investigates Ti/Al-based ohmic contacts to p-type 4H-SiC. The lowest specific contact resistance of 3.7×10⁻⁵ Ω-cm² was achieved using Ti/Al/NiV after annealing at 1000°C. TEM analysis revealed an epitaxial Ti layer on 4H-SiC, and XRD confirmed the formation of Ti3SiC2, correlating with lower Schottky barrier height. The results indicate that Ti3SiC2 formation, especially in Ti/Al/NiV structures, significantly reduces contact resistance due to improved current conduction across the interface. 4H-SiC, ohmic contact, p-type, Ti3SiC2 https://creativecommons.org/licenses/by/4.0/