Authors: Suwan Mendis, Chin-Che Tin, Ilkham G. Atabaev, Bakhtiyar G. Atabaev
Affiliations: Department of Physics, 206 Allison Laboratory, Auburn University, AL 36849, U.S.A, Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia, Physical Technical Institute of Uzbek Academy of Sciences, Tashkent, Uzbekistan, Arifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan
Emails: [email protected]
Journal: International Journal of Fundamental Physical Sciences (IJFPS)
Volume: 3, Issue: 4, Pages: 75-78, Date: December, 2013
ISSN: 2231-8186
DOI: https://doi.org/10.14331/ijfps.2013.330059
Solid state thermal diffusion is generally impractical in SiC due to high temperature requirements. This study demonstrates doping in 4H-SiC using oxidation or silicidation to create silicon or carbon vacancies, facilitating impurity diffusion at temperatures below 1400 °C. Both phosphorus and boron doping are evaluated, with phosphorus showing greater efficacy. The paper outlines experimental procedures for sample preparation, diffusion annealing, and doping enhancement via vacancy-assisted methods. This approach enables low-temperature doping with thermodynamic support and improved process control.
silicon carbide, impurity, doping, diffusion